copyright ? harris corporation 1995 6-12 semiconductor package jedec to-218ac symbol anode2 cathode anode1 cathode (flange) k a1 a2 features ? ultrafast with soft recovery characteristic (t rr < 30ns) ? +175 o c rated junction temperature ? reverse voltage up to 200v ? avalanche energy rated applications ? switching power supply ? power switching circuits ? general purpose description mur3010pt, mur3015pt, mur3020pt and rurh1510cc, RURH1515CC, rurh1520cc are ultrafast dual diodes (t rr < 30ns) with soft recovery characteristics. they have a low forward voltage drop and are of planar, silicon nitride passivated, ion-implanted, epitaxial construction. these devices are intended for use as energy steering/ clamping diodes and recti?ers in a variety of switching power supplies and other power switching applications. their low stored charge and ultrafast recovery with soft recovery characteristics minimizes ringing and electrical noise in many power switching circuits thus reducing power loss in the switching transistor. packaging availability part number package brand mur3010pt to-218ac mur3010pt rurh1510cc to-218ac rurh1510c mur3015pt to-218ac mur3015pt RURH1515CC to-218ac rurh1515c mur3020pt to-218ac mur3020pt rurh1520cc to-218ac rurh1520c note: when ordering, use the entire part number. april 1995 mur3010pt, rurh1510cc, mur3015pt, RURH1515CC, mur3020pt, rurh1520cc 15a, 100v - 200v ultrafast dual diodes absolute maximum ratings t c = +25 o c mur3010pt rurh1510cc mur3015pt RURH1515CC mur3020pt rur1520cc peak repetitive reverse voltage. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . v rrm 100v 150v 200v working peak reverse voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . v rwm 100v 150v 200v dc blocking voltage. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . v r 100v 150v 200v average rectified forward current . . . . . . . . . . . . . . . . . . . . . . . . . . . . i f(av) (total device forward current at rated v r and t c = 150 o c) 15a 15a 15a peak forward repetitive current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .i frm (rated v r , square wave 20khz) 30a 30a 30a nonrepetitive peak surge current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .i fsm (surge applied at rated load condition halfwave 1phase 60hz) 200a 200a 200a operating and storage temperature . . . . . . . . . . . . . . . . . . . . . . . . t stg , t j -55 o c to +175 o c -55 o c to +175 o c -55 o c to +175 o c file number 2775.4
6-13 mur3010pt, mur3015pt, mur3020pt, rurh1510cc, RURH1515CC, rurh1520cc electrical speci?cations t c = +25 o c, unless otherwise speci?ed symbol test condition limits units mur3010pt, rurh1510cc mur3015pt, RURH1515CC mur3020pt, rurh1520cc min typ max min typ max min typ max v f i f = 15a t c = +150 o c - - 0.85 - - 0.85 - - 0.85 v i f = 15a t c = +25 o c - - 1.05 - - 1.05 - - 1.05 v i r at t c = +150 o c v r = 100v - - 500 ------ m a v r = 150v -----500--- m a v r = 200v --------500 m a i r at t c = +25 o c v r = 100v - - 100 ------ m a v r = 150v -----100--- m a v r = 200v --------100 m a t rr i f = 1a - - 30 - - 30 - - 30 ns i f = 15a - - 35 - - 35 - - 35 ns t a i f = 1a - 18 - - 18 - - 18 - ns i f = 15a - 20 - - 20 - - 20 - ns t b i f = 1a - 9 - - 9 - - 9 - ns i f = 15a - 10 - - 10 - - 10 - ns r q jc - - 1.5 - - 1.5 - - 1.5 o c/w e avl see fig. 7, 8 - - 20 - - 20 - - 20 mj definitions v f = instantaneous forward voltage (pw = 300 m s, d = 2%). i r = instantaneous reverse current. t rr = reverse recovery time at di f /dt = 100a/ m s (see figure 2), summation of t a + t b . t a = time to reach peak reverse current at di f /dt = 100a/ m s (see figure 2). t b = time from peak i rm to projected zero crossing of i rm based on a straight line from peak i rm through 25% of i rm (see figure 2). r q jc = thermal resistance junction to case. e avl = controlled avalanche energy (see figures 7 and 8). pw = pulse width. d = duty cycle. figure 1. t rr test circuit figure 2. definitions of t rr , t a and t b c1 l loop dut q 3 r 3 q 4 q 2 r 1 r 2 -v 4 q 1 -v 2 0 0 +v 1 t 1 t 2 t 3 r 4 +v 3 v 1 amplitude controls i f v 2 amplitude controls d i f /dt l 1 = self inductance of r 4 t 1 3 5t a(max) t 2 > t rr t 3 > 0 l 1 r 4 t a(min) 10 +l loop i f t rr t a t b 0 i rm 0.25 i rm v r v rm (rec) di f dt
6-14 mur3010pt, mur3015pt, mur3020pt, rurh1510cc, RURH1515CC, rurh1520cc typical performance curves figure 3. forward voltage vs forward current characteristic figure 4. reverse voltage vs reverse current characteristic figure 5. typical t rr , t a and t b curves vs forward current figure 6. typical current derating curve vs case temperature figure 7. avalanche energy test circuit figure 8. current voltage waveform i l peak = 1a, l = 40mh, r < 0.1w, e avl = 1/2li 2 [v avl /(v avl - v dd )] i f , forward current (a) v f , forward voltage drop (v) t j = +25 o c t j = +100 o c t j = +150 o c 100.0 10.0 1.0 0.10 0.1 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 i r , reverse current ( m a) v r , reverse voltage (v) t j = +25 o c t j = +100 o c t j = +150 o c 100 1 0.1 0.01 0.001 0 50 100 150 200 10 t, recovery times (ns) i f , forward current (a) 50.0 40.0 30.0 20.0 10.0 1.0 10.0 100.0 t rr t a t b 16 14 12 10 8 6 4 2 0 140 145 150 155 160 165 170 175 180 t c , case temperature ( o c) i f(avg) , average current (a) square wave dc 12v q 2 q 1 12v 130 w dut current sense + l r 1m w v dd 130 w - v dd iv t 0 t 1 t 2 i l v avl t
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